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2SC5124
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC5124 1500 800 6 10(Pulse20) 5 100(Tc=25C) 150 -55 to +150 Unit V V V A A W C C
Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose
(Ta=25C) 2SC5124 100max 1max 100max 800min 8min 4 to 9 5max 1.5max 3typ 130typ Unit A mA A V
sElectrical Characteristics
Symbol ICBO1 ICBO2 IEBO V(BR)CEO hFE1 hFE2 VCE(sat) VBE(sat) fT COB Conditions VCB=1200V VCB=1500V VEB=6V IC=10mA VCE=5V, IC=1A VCE=5V, IC=8A IC=8A, IB=2A IC=8A, IB=2A VCE=12V, IE=-1A VCB=10V, f=1MHz
External Dimensions FM100(TO3PF)
0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 o3.30.2 1.6
23.00.3
9.50.2
a b
V V MHz pF
19.1 16.2
1.75 2.15 1.05 +0.2 -0.1 5.450.1 5.450.1 4.4 1.5 0.65 +0.2 -0.1
3.3
0.8
3.35
sTypical Switching Characteristics (Common Emitter)
VCC (V) 200 RL () 33.3 IC (A) 6 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 1.2 IB2 (A) -2.4 ton (s) 0.1typ tstg (s) 4.0typ tf (s) 0.2typ
1.5
B
C
E
Weight : Approx 6.5g a. Type No. b. Lot No.
IC - VCE Characteristics (Typical)
2.4 A
VCE(sat)-IC Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at)( V ) 3 I C /I B= 5:1 Collector Current I C( A)
IC - V BE Temperature Characteristics (Typical)
10 (V CE= 5V)
10
1. 8A
8 Collector Current I C( A)
8
1. 2A
2
6
700 mA
6
4
300 mA
4
1
2
IB=100m A
2
0
0
1
2
3
4
0 0.02
0.05
0.1
0.5
1
5
10
0
0
0.5 Base-Emittor Voltage V B E( V)
1.0
Collector-Emitter Voltage V C E( V)
Collector Current I C( A)
hFE - IC Characteristics (Typical)
(VCE=5V) 40 DC Curr ent Gain h FE
t stg *tf - I C Characteristics (Typical)
10
j-a - t Characteristics
t o n*t s tg *t f( s)
125C 25C
5 V C C 200V IC:I B 1: -IB2=5:1:2 1 0.5 tf 0.1 0.2
t s tg
10
-55C
5 3 0.02
Switching Ti me
0.1
0.5
1
5
10
0.5
1 Collector Current I C( A)
5
10
Collector Current I C( A)
Safe Operating Area (Single Pulse)
30 30
Reverse Bias Safe Operating Area
100
P c - T a Derating
10 Collector Curre nt I C( A) 5
10 Co lle ctor Cu rre nt I C( A) 5
Maximu m Power Dissipa tion P C( W)
50
1 0.5
1 0.5 Without Heatsink Natural Cooling L=3mH -IB2=1A Duty:less than 1%
0.1 5 10 50 100 500 1000 Collector-Emitter Voltage V C E( V)
0.1 50
100
500
1000
2000
3.5 0
Without Heatsink 0 25 50 75 100 125 150
Collector-Emitter Voltage V C E( V)
Ambient Temperature Ta(C)
128
3.0
10 0 s
W ith In fin ite he at si nk

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